ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 1.3 mm
Height: 1.1 mm
Length: 2.9 mm
Fall Time: 24 ns
Rise Time: 25 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 9 ns
Typical Turn-Off Delay Time: 21 ns
Id - Continuous Drain Current: 540 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 600 mS
Rds On - Drain-Source Resistance: 346 mOhms
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
