Infineon BDP950H6327XTSA1 BJTs - ບາຍເປີ Transistors AF TRANSISTORS

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 5 W

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV