Infineon BAR9002ELE6327XTMA1 ສະຫນັບສະຫນູນອານເຕນນາ RF DIODES

Technology: Si

Unit Weight: 0.610 mg

Carrier Life: 750 ns

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 100 mA

Ir - Reverse Current: 50 nA

Vf - Forward Voltage: 900 mV

Vr - Reverse Voltage: 80 V

Pd - Power Dissipation: 150 mW

Maximum Diode Capacitance: 0.18 pF

Maximum Operating Frequency: 1.8 GHz

Minimum Operating Frequency: 1 MHz

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Maximum Series Resistance @ Maximum IF: 2.3 Ohms

Maximum Series Resistance @ Minimum IF: 2 Ohms