ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 6.22 mm
Height: 2.3 mm
Length: 6.5 mm
Fall Time: 10 ns
Rise Time: 16 ns
Technology: Si
Unit Weight: 330 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Qg - Gate Charge: 57 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 210 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 22 ns
Id - Continuous Drain Current: 19 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 148 mOhms
Vds - Drain-Source Breakdown Voltage: 300 V
Vgs th - Gate-Source Threshold Voltage: 5 V
