Infineon AIMZH120R120M1TXKSA1 SiC MOSFETS SIC_DISCRETE

Fall Time: 15 ns

Rise Time: 6 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 133 W

Vgs - Gate-Source Voltage: - 5 V, + 23 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.4 S

Rds On - Drain-Source Resistance: 117 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.1 V