Infineon AIMZA75R060M1HXKSA1 SiC MOSFETS ລົດຍົນ_SICMOS

Fall Time: 8 ns

Rise Time: 8 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 144 W

Vgs - Gate-Source Voltage: - 2 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V