Infineon AIMCQ120R080M1TXTMA1 SiC MOSFETS ອອກແບບເພື່ອຮອງຮັບການນຳໃຊ້ OBC/DC-DC ສໍາລັບສະຖາບັນລົດຍົນ 800V

Fall Time: 11.1 ns

Rise Time: 4 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 24 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 211 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 6.6 ns

Typical Turn-Off Delay Time: 11.8 ns

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.1 V