Infineon IMYH200R050M1HXKSA1 SiC MOSFETS CoolSiC 2000 V SiC Trench MOSFET ໃນຊຸດ TO-247PLUS-4-HCC

Fall Time: 12 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 82 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 348 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 48 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 64 mOhms

Vds - Drain-Source Breakdown Voltage: 2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V