Infineon IMYH200R012M1HXKSA1 SiC MOSFETS CoolSiC 2000 V SiC Trench MOSFET ໃນຊຸດ TO-247PLUS-4-HCC

Fall Time: 24 ns

Rise Time: 13 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 246 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 552 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 123 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 30 S

Rds On - Drain-Source Resistance: 16.5 mOhms

Vds - Drain-Source Breakdown Voltage: 2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V