Infineon IMW65R027M1HXKSA1 SiC MOSFETS SILICON CARBIDE MOSFET

Fall Time: 14.2 ns

Rise Time: 13.6 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 62 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 189 W

Vgs - Gate-Source Voltage: - 5 V, + 23 V

Typical Turn-On Delay Time: 24.4 ns

Typical Turn-Off Delay Time: 22.7 ns

Id - Continuous Drain Current: 47 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5.7 V