Infineon BSZ120P03NS3 G MOSFETs P-Ch -30V -40A TSDSON-8 OptiMOS P3

Width: 3.3 mm

Height: 1.1 mm

Length: 3.3 mm

Fall Time: 5 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 38.760 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 45 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 22 S

Rds On - Drain-Source Resistance: 9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 3.1 V