Vishay General Semiconductor UGB8DT-E3/45 ຕົວຄັດກະສັງຟັງຟືນໄວ 200 ໂວລ໌ 8.0A 20ns 150 ອັມ IFSM

Width: 9.14 mm

Height: 4.83 mm

Length: 10.45 mm

Unit Weight: 1.800 g

Configuration: Single Dual Cathode

Recovery Time: 30 ns

Mounting Style: SMD/SMT

Max Surge Current: 150 A

If - Forward Current: 8 A

Ir - Reverse Current: 10 uA

Vf - Forward Voltage: 1.2 V

Vr - Reverse Voltage: 200 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C