Vishay General Semiconductor SISH407DN-T1-GE3 MOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH

Fall Time: 38 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 488.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 93.8 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 92 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 S

Rds On - Drain-Source Resistance: 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V