Vishay General Semiconductor SIR622DP-T1-GE3 MOSFETs 150V Vds 20V Vgs PowerPAK SO-8

Width: 5.15 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 6 ns

Rise Time: 6 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 51.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 33 S

Rds On - Drain-Source Resistance: 17.7 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V