Vishay General Semiconductor SIA811ADJ-T1-GE3 MOSFETs -20V Vds 8V Vgs PowerPAK SC-70

Fall Time: 10 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 28 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 6.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 116 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV