Vishay General Semiconductor SI9933CDY-T1-GE3 MOSFETs -20V Vds 12V Vgs SO-8

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 13 ns

Rise Time: 50 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 17 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 58 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV