Vishay General Semiconductor SI7328DN-T1-GE3 MOSFETs 30V 35A 52W 6.6mohm @ 10V

Fall Time: 8 ns

Rise Time: 10 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N Channel

Qg - Gate Charge: 21 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 97 S

Rds On - Drain-Source Resistance: 6.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V