Vishay General Semiconductor SI7112DN-T1-GE3 MOSFETs 30V 17.8A 3.8W 7.5mohm @ 10V

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.8 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 17.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 97 S

Rds On - Drain-Source Resistance: 7.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V