Vishay General Semiconductor SI6562CDQ-T1-BE3 MOSFETs TSSOP ຄູ່ ຊ່ອງ 20V

Fall Time: 10 ns, 15 ns

Rise Time: 10 ns, 25 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 15 nC, 34 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.6 W, 1.7 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 12 ns, 30 ns

Typical Turn-Off Delay Time: 20 ns, 45 ns

Id - Continuous Drain Current: 6.7 A, 6.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 17 S, 22 S

Rds On - Drain-Source Resistance: 2 Ohms, 6 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV