Vishay General Semiconductor SI4463BDY-T1-E3 MOSFETs 20V 13.7A 0.011Ohm

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 13.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V