Fairchild KSD1616AGBU BJTs - ບາຍໂປລາ ແທນຊິດເຕີ NPN Epitaxial Sil

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 179 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 750 mW

DC Current Gain hFE Max: 600

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 135

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 150 mV