Fairchild KSC2690AYSTU BJTs - ບິໂພລາ ແທນຊິສຕໍ NPN Si Transistor Epitaxial

Width: 3.25 mm

Height: 11 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 320

Gain Bandwidth Product fT: 155 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 1.2 A

Maximum DC Collector Current: 1.2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 400 mV