Fairchild KSC2383OTA BJTs - ບາຍໂປລາ ແທນຊິດເຕີ NPN Epitaxial Sil

Width: 3.9 mm

Height: 8 mm

Length: 4.9 mm

Technology: Si

Unit Weight: 371.100 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 900 mW

DC Current Gain hFE Max: 320

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 1.5 V