Fairchild KSC2073TU BJTs - ບາຍໂປລາ ແທນຊິດເຕີ NPN Epitaxial Sil

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 140

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 1 V