Fairchild KSB834WYTM BJTs - ບາຍໂປລາ ທຣານຊິສຕໍ PNP Epitaxial Sil

Width: 9.65 mm

Height: 4.83 mm

Length: 10.67 mm

Technology: Si

Unit Weight: 1.312 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 30 W

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 9 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV