Fairchild KSA708YBU BJTs - ບາຍໂປລາ ທຣານຊິສຕໍ PNP Epitaxial Sil

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 179 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 240

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 300 mV