Fairchild FQT1N80TF-WS MOSFETs 800V 0.2A 20Ohm ຊ່ອງ N

Width: 3.5 mm

Height: 1.8 mm

Length: 6.5 mm

Fall Time: 25 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 112 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V