Fairchild FQPF7P20 MOSFET 200V ຊ່ອງ P QFET

Width: 4.9 mm

Height: 16.07 mm

Length: 10.36 mm

Fall Time: 42 ns

Rise Time: 110 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 45 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 5.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 690 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 5 V