Fairchild FQD2N90TM MOSFET 900V N-Channel QFET

Width: 6.22 mm

Height: 2.39 mm

Length: 6.73 mm

Fall Time: 30 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 15 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 1.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.7 S

Rds On - Drain-Source Resistance: 7.2 Ohms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 3 V