Fairchild FJI5603DTU BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣອນ NPN ຊິລິກອນ

Width: 4.83 mm

Height: 9.65 mm

Length: 10.29 mm

Technology: Si

Unit Weight: 2.084 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

DC Current Gain hFE Max: 20

Gain Bandwidth Product fT: 5 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 1.6 kV

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 800 V

Collector-Emitter Saturation Voltage: 1.2 V