Fairchild FJAF4210OTU BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣອດ PNP Si Transistor Epitaxial

Width: 5.7 mm

Height: 16.7 mm

Length: 15.7 mm

Technology: Si

Unit Weight: 7 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 180

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: - 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 500 mV