ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 4.5 mm
Height: 0.8 mm
Length: 5 mm
Fall Time: 1.9 ns, 2.7 ns
Rise Time: 1.3 ns, 2.8 ns
Technology: Si
Unit Weight: 210 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 5 nC, 19 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 3.4 A, 2.6 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 S
Rds On - Drain-Source Resistance: 110 mOhms, 190 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V, 80 V
Vgs th - Gate-Source Threshold Voltage: 3 V, 1.6 V
