Fairchild FCH041N65F-F085 MOSFETs 650V N-Channel SuperFET II MOSFET

Width: 4.82 mm

Height: 20.82 mm

Length: 15.87 mm

Fall Time: 8 ns

Rise Time: 39 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 234 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 595 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 55 ns

Typical Turn-Off Delay Time: 183 ns

Id - Continuous Drain Current: 76 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 96 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3 V