Fairchild BS170-D26Z FET N-Ch ໂມດພັດທະນາການປະຕິບັດຂອງພາຍໃນ

Width: 4.19 mm

Height: 5.33 mm

Length: 5.2 mm

Technology: Si

Unit Weight: 286 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 830 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.32 S

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V