Fairchild BC63916-D27Z BJTs - ບາຍໂປລາ ແທນຊິສຕໍເຣອດ NPN ແທນຊິສຕໍເຣອດ ພະລັງງານກາງ

Width: 4.19 mm

Height: 5.33 mm

Length: 5.2 mm

Technology: Si

Unit Weight: 55 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV