ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Fall Time: 19 ns
Rise Time: 21 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 179 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 357 W
Vgs - Gate-Source Voltage: - 4 V, + 18 V
Typical Turn-On Delay Time: 43 ns
Typical Turn-Off Delay Time: 48 ns
Id - Continuous Drain Current: 67 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 27.4 S
Rds On - Drain-Source Resistance: 49 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
