Diodes Incorporated ZXTN2010ZQTA BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ Pwr Low Sat Transistor

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 230 mV