ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Fall Time: 16 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 453.600 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 750 mW
Vgs - Gate-Source Voltage: - 40 V, + 40 V
Typical Turn-On Delay Time: 2.5 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 260 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.4 S
Rds On - Drain-Source Resistance: 5.5 Ohms
Vds - Drain-Source Breakdown Voltage: 240 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
