Diodes Incorporated DXTN07060BFG-7 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີ Pwr Mid Perf Transistor

Technology: Si

Unit Weight: 30 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 3.1 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV