Diodes Incorporated DMWSH120H90SM4 Silicon Carbide Power MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS

Fall Time: 6.4 ns

Rise Time: 21.3 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 51.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 235 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 9.1 ns

Typical Turn-Off Delay Time: 17.4 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 97.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V