Diodes Incorporated DMWSH120H90SM3Q ຊິລິຄອນ ຄາບາດ ພາວເອີ ໂມສເຟັດ SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS

Fall Time: 7.1 ns

Rise Time: 20 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 246 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 10.1 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 41 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 97.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V