Diodes Incorporated DMWSH120H90SCT7 SiC MOSFETS SiC MOSFET BVDSS: >1000V TO263-7 ທູບ 50 ຊິ້ນ

Fall Time: 8.5 ns

Rise Time: 18.8 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 54.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 197 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 9.1 ns

Typical Turn-Off Delay Time: 17.2 ns

Id - Continuous Drain Current: 38.2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V