Diodes Incorporated DMWSH120H28SM3 ຊິລິຄອນ ຄາບາດ ພາວເອີ ໂມສເຟັດ SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS

Fall Time: 12.8 ns

Rise Time: 40.6 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 175 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 405 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 24.2 ns

Typical Turn-Off Delay Time: 44.8 ns

Id - Continuous Drain Current: 97.4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V