Diodes Incorporated DMN3150L-7 MOSFET ສັນຍານນ້ອຍ ຊ່ອງ N

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Fall Time: 3.26 ns

Rise Time: 3.49 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 1.14 ns

Typical Turn-Off Delay Time: 15.02 ns

Id - Continuous Drain Current: 3.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 54 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 620 mV