ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Fall Time: 13.8 ns, 237 ns
Rise Time: 3.3 ns, 2.3 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.2 nC, 800 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 400 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.5 ns, 3.3 ns
Typical Turn-Off Delay Time: 16.8 ns, 406 ns
Id - Continuous Drain Current: 800 mA, 550 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 700 mOhms, 1.7 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV, 1 V
