Comchip Technology CMSBN6601-HF MOSFETs MOSFET ຄູ່ N-CH 20VDS 12VGS 13A CSPB2718-6

Fall Time: 55 us

Rise Time: 5 us

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 25.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 1.5 us

Typical Turn-Off Delay Time: 40 us

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 6.5 S

Rds On - Drain-Source Resistance: 11.5 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V