Comchip Technology CMSBN4616-HF MOSFETs MOSFET DUAL N-CH 15VDS 12VGS 8A CSPB1515-4

Fall Time: 12 us

Rise Time: 6.2 us

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 8.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 1.1 us

Typical Turn-Off Delay Time: 14 us

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 18 mOhms

Vds - Drain-Source Breakdown Voltage: 15 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V