Comchip Technology CMS04N06Y-HF MOSFETs MOSFET N-CH 60VDS 20VGS 4A SOT-223

Fall Time: 14 ns

Rise Time: 7.3 ns

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 1.6 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V