Central Semiconductor PN4916 PBFREE BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ PNP 30Vcbo 30Vceo 5.0Vebo 100mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 200 at 1 V, 10 mA

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15 at 1 V, 50 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 300 mV