Central Semiconductor PN4391 APM TIN/LEAD JFETs N-Ch 40Vgd 40Vgs 50mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 mW

Gate-Source Cutoff Voltage: 10 V

Maximum Drain Gate Voltage: 40 V

Drain-Source Current at Vgs=0: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 30 Ohms

Vgs - Gate-Source Breakdown Voltage: 40 V